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Comprehensive study of InGaP/Al x Ga 1 x As/GaAs heterojunction bipolar transistors with different doping concentrations of Al x Ga 1 x As graded layers

✍ Scribed by Cheng, Shiou-Ying; Chen, Jing-Yuh; Chen, Chun-Yuan; Chuang, Hung-Ming; Yen, Chih-Hung; Lee, Kuan-Ming; Liu, Wen-Chau

Book ID: 125534387
Publisher: Institute of Physics
Year: 2003
Tongue: English
Weight: 372 KB
Volume: 19
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/19/3/010

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