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Photoluminescence Studies of Mg-Doped Al x Ga 1- x As Epitaxial Layers Grown by Molecular Beam Epitaxy

✍ Scribed by Kim, Min Su; Kim, Do Yeob; Park, Ho Jin; Kim, Jong Su; Kim, Jin Soo; Lee, Dong-Yul; Son, Jeong-Sik; Leem, Jae-Young


Book ID
125523240
Publisher
Institute of Pure and Applied Physics
Year
2009
Tongue
English
Weight
129 KB
Volume
48
Category
Article
ISSN
0021-4922

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Photoluminescence and X-ray diffraction
✍ S.F. Yoon; P.H. Zhang; H.Q. Zheng πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 516 KB

We have investigated the effect of substrate temperature (Ts varied from 410 to 560Β°C) on the crystalline and optical properties of In l\_x\_rGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), low t