𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A new empirical large-signal HEMT model

✍ Scribed by Shirakawa, K.; Shimizu, M.; Kawasaki, Y.; Ohashi, Y.; Okubo, N.

Book ID
114552643
Publisher
IEEE
Year
1996
Tongue
English
Weight
293 KB
Volume
44
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

An improved empirical large-signal model
An improved empirical large-signal model for the GaAs- and GaN-based HEMTs
✍ Lin-Sheng Liu πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 657 KB

A complete empirical large-signal model for the GaAs-and GaN-based HEMTs is presented. Three generalized drain current I-V models characterized by the multi-bias Pulsed I-V measurements are presented along with their dependence on temperature and quiescent bias state. The new I-V equations dedicated

A new instantaneous model of MESFET and
A new instantaneous model of MESFET and HEMT devices for large-signal circuit design
✍ Maurizio Cicolani; Alberto Di Martino; Silvio D'Innocenzo; Stefano Pisa; Pasqual πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p