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An improved empirical large-signal model for the GaAs- and GaN-based HEMTs

โœ Scribed by Lin-Sheng Liu

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
657 KB
Volume
21
Category
Article
ISSN
1096-4290

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โœฆ Synopsis

A complete empirical large-signal model for the GaAs-and GaN-based HEMTs is presented. Three generalized drain current I-V models characterized by the multi-bias Pulsed I-V measurements are presented along with their dependence on temperature and quiescent bias state. The new I-V equations dedicated for different modeling cases are kept accurate enough to the higher-order derivatives of drain-current. Besides, an improved charge-conservative gate charge Q-V formulation is proposed to extract and model the nonlinear gate capacitances. The composite nonlinear model is shown to accurately predict the S-parameters, large-signal power performances as well as the two-tone intermodulation distortion products for various types of GaAs and GaN HEMTs.

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