𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analytical nonlinear HEMT model for large signal circuit simulation

✍ Scribed by Tanimoto, T.


Book ID
114552738
Publisher
IEEE
Year
1996
Tongue
English
Weight
338 KB
Volume
44
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A new instantaneous model of MESFET and
✍ Maurizio Cicolani; Alberto Di Martino; Silvio D'Innocenzo; Stefano Pisa; Pasqual πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p

Large signal analysis of AlGaN/GaN-HEMT
✍ Fujishiro, H. I. ;Narita, S. ;Tomita, Y. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 296 KB

## Abstract The large signal time domain simulation of the 40 GHz one‐stage amplifier with the AlGaN/GaN‐HEMT is performed by means of the coupled physical device‐circuit simulation, in which the Monte Carlo (MC) device simulator is incorporated into the embedding circuit as a realistic physics‐bas