Large signal analysis of AlGaN/GaN-HEMT amplifier by coupled physical device-circuit simulation
✍ Scribed by Fujishiro, H. I. ;Narita, S. ;Tomita, Y.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 296 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The large signal time domain simulation of the 40 GHz one‐stage amplifier with the AlGaN/GaN‐HEMT is performed by means of the coupled physical device‐circuit simulation, in which the Monte Carlo (MC) device simulator is incorporated into the embedding circuit as a realistic physics‐based device model. The forward and the backward travelling waves are extracted from the current and the voltage signal waveforms at the input and the output terminals, and then the power performances of the amplifier are evaluated using them. The amplifier exhibits the linear power gain (G ~a~) of 12.9 dB and the saturation output power (P ~o,sat~) of 25.7 dBm at 40 GHz. The influence of the impact ionization on the power performances is also investigated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)