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A new equivalent MOSFET representation of a HEMT to analytically model nonlinear charge control for simulation of HEMT devices and circuits

✍ Scribed by Karmalkar, S.


Book ID
114536797
Publisher
IEEE
Year
1997
Tongue
English
Weight
222 KB
Volume
44
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES


A new instantaneous model of MESFET and
✍ Maurizio Cicolani; Alberto Di Martino; Silvio D'Innocenzo; Stefano Pisa; Pasqual πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p