✦ LIBER ✦

A new instantaneous model of MESFET and HEMT devices for large-signal circuit design

✍ Scribed by Maurizio Cicolani; Alberto Di Martino; Silvio D'Innocenzo; Stefano Pisa; Pasquale Tommasino; Alessandro Trifiletti

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 192 KB
Volume: 29
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.1124

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✦ Synopsis

Abstract

A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an X‐band hybrid amplifier. Excellent agreement between measurements and simulated performance in small‐signal and nonlinear power characteristics has been obtained. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 187–190, 2001.

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