A new empirical nonlinear model for HEMT and MESFET devices
β Scribed by Angelov, I.; Zirath, H.; Rosman, N.
- Book ID
- 114551282
- Publisher
- IEEE
- Year
- 1992
- Tongue
- English
- Weight
- 684 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0018-9480
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π SIMILAR VOLUMES
The obtained numerical results show that the quasisquare excited on a point situated on its diagonal is an efficient technique for obtaining a broader bandwidth structure radiating circular polarized waves. Furthermore, the obtained structure can be used to operate as a dual-frequency structure, pro
## Abstract A nonlinear lumpedβelement model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__βband hybrid amplifier. Excellent agreement between measurements and simulated p
A complete extraction procedure able to determine MES-FET and HEMT nonlinear model parameters starting from standard dc and S-parameter measured data is presented. The procedure has been checked on different P-HEMTs, and a¨erage errors lower than 10% ha¨e been found for the static output characteris