A new nonlinear dc model for HBT and mesfet power devices
✍ Scribed by Rached Hajji; Ammar B. Kouki; Fadhel M. Ghannouchi
- Book ID
- 112146642
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 383 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0895-2477
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📜 SIMILAR VOLUMES
In this paper, a new empirical model for the dc I᎐V characteristics of a GaAs MESFET transistor is presented. The con¨entional approach for modeling the dc I᎐V characteristics of a MESFET transistor adopts the hyperbolic-tangent dependence on V through the d s obser¨ation of the I ¨ersus V cur¨e. Th
## Abstract A compact physics‐based transit‐time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit‐time frequency versus bias (__I__~__C__~, __V__~__CE__~), especially at low‐ and medium‐current regimes. Starting with the HICUM model, we introduce a ne