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A modified HICUM model for GaInP/GaAs HBT devices

✍ Scribed by S.-C. Tseng; C. C. Meng; W.-Y. Chen; J.-Y. Su

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
101 KB
Volume
48
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A compact physics‐based transit‐time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit‐time frequency versus bias (I~C~, V~CE~), especially at low‐ and medium‐current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit‐time frequency versus bias (I~C~, V~CE~) more precisely. This model has obvious advantages over the VBIC model for showing the relation of f~t~ versus bias (I~C~, V~CE~) in the low and medium current regimes for GaInP/GaAs HBT devices. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 780–783, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21474

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