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A new MESFET nonlinear model

✍ Scribed by B. L. Ooi; J. Y. Ma; M. S. Leong

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
186 KB
Volume
29
Category
Article
ISSN
0895-2477

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✦ Synopsis

In this paper, a new empirical model for the dc I᎐V characteristics of a GaAs MESFET transistor is presented. The con¨entional approach for modeling the dc I᎐V characteristics of a MESFET transistor adopts the hyperbolic-tangent dependence on V through the d s obser¨ation of the I ¨ersus V cur¨e. The deri¨ed model is capable of d s d s accurately modeling the de¨ice current᎐¨oltage beha¨ior in different operation regions. The new model equations describe the de¨ice drain current as a polynomial of the effecti¨e gate᎐source ¨oltage V , which e f f is in turn a rational function of V , and the parameters for the g s polynomial ¨ary with V . Model parameter extraction is made for a d s 0.5 m gate-length MESFET de¨ice. Measured and modeled results are compared, and good agreement is obtained. A comparison among the proposed model, Curtice's and Chalmers' model, and Parker's model are also made in this paper.

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