In this paper, a new empirical model for the dc I᎐V characteristics of a GaAs MESFET transistor is presented. The con¨entional approach for modeling the dc I᎐V characteristics of a MESFET transistor adopts the hyperbolic-tangent dependence on V through the d s obser¨ation of the I ¨ersus V cur¨e. Th
Nonlinearities in a MESFET distributed model
✍ Scribed by Martín-Guerrero, T. M. ;Camacho-Peñalosa, C.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 401 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1050-1827
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