A MESFET model for circuit analysis
✍ Scribed by Cornelis D. Hartgring; W.G. Oldham; Tsu-Yin Chiu
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 595 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We compare the ability of three different equivalent-circuit extraction methods to give ensembles of model parameters that accurately predict not only average S-parameters but the S-parameter statistics, i.e., the standard deviations and intercorrelations between the real and imaginary parts. Measur
## Abstract In this paper, the relative advantages of several widely used MESFET and HEMT models have been compared. The nonlinear behaviours of the Curtice quadratic, Curtice cubic, Statz, Materka, Rodriguez, and Chalmers models were investigated through their current–voltage–temperature character
## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p
## Abstract A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model
In this paper, a new empirical model for the dc I᎐V characteristics of a GaAs MESFET transistor is presented. The con¨entional approach for modeling the dc I᎐V characteristics of a MESFET transistor adopts the hyperbolic-tangent dependence on V through the d s obser¨ation of the I ¨ersus V cur¨e. Th