## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p
Comparing the MESFET and HEMT models for efficient circuit design
✍ Scribed by R. Touhami; M. C. E. Yagoub; H. Baudrand
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 568 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0894-3370
- DOI
- 10.1002/jnm.641
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✦ Synopsis
Abstract
In this paper, the relative advantages of several widely used MESFET and HEMT models have been compared. The nonlinear behaviours of the Curtice quadratic, Curtice cubic, Statz, Materka, Rodriguez, and Chalmers models were investigated through their current–voltage–temperature characteristics. To better fit such characteristics, neural‐based models of MESFET and HEMT were generated using a Levenberg–Marquardt back‐propagation algorithm. Close agreement was observed between simulated results and experimental data. Copyright © 2007 John Wiley & Sons, Ltd.
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