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Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications

✍ Scribed by Sneha Kabra; Harsupreet Kaur; Subhasis Haldar; Mridula Gupta; R. S. Gupta

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
515 KB
Volume
49
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model. Results have been verified using ATLAS 2D device simulator and are also compared with parasitic element‐dependent model. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2446–2450, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22744

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