An accurate 2-D model for transconductance-to-current ratio and drain conductance of vertical surrounding-gate (VSG) MOSFETs for microwave circuit applications
✍ Scribed by Abhinav Kranti; Rashmi; S. Haldar; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 289 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An accurate analytical model for the transconductance‐to‐current ratio (g~m~/I~ds~), current–voltage characteristics, and drain conductance is developed for a vertical surrounding‐gate (VSG) MOSFET based on the solution of the 2‐D Poisson's equation. The dependence of g~m~/I~ds~, drain current, and drain conductance on key technological parameters has been analyzed in detail. A design rule to select the device parameters to enhance g~m~/I~ds~ is proposed. Results show that higher values of g~m~/I~ds~ can be achieved in VSG MOSFETs as compared to DG MOSFETs. Close agreement with simulated results confirms the validity of the present model. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 415–421, 2001.