✦ LIBER ✦

Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications

✍ Scribed by Adarsh Singh; Srikanta Bose; Mridula Gupta; R. S. Gupta

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 264 KB
Volume: 31
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.10043

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✦ Synopsis

Abstract

The admittance parameters and unilateral power gain of a nonself‐aligned GaN MESFET incorporating the parasitic elements along with gate‐length modulation are evaluated analytically in the present model. The cutoff frequency of the maximum available gain and the maximum frequency of oscillation are also determined in the model. For a GaN MESFET (4 μm×100 μm), the maximum frequency of oscillation is obtained to be about 2 GHz at zero gate bias. Using the present model, a unilateral power gain of 18 dB is predicted for the device. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 387–393, 2001.

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