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A new charge-control model for single- and double-heterojunction bipolar transistors

✍ Scribed by Parikh, C.D.; Lindholm, F.A.


Book ID
114534624
Publisher
IEEE
Year
1992
Tongue
English
Weight
875 KB
Volume
39
Category
Article
ISSN
0018-9383

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## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction