A fully analytical partitioned-charge-based model for linearly-graded SiGe-base heterojunction bipolar transistors

Parameter extraction of a base-collector

Parameter extraction of a base-collector equivalent circuit model for SiGe heterojunction bipolar transistors

✍ Seonghearn Lee 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation