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Collector-emitter offset voltage in InP/InGaAs single and double heterojunction bipolar transistors

✍ Scribed by A. Ouacha; M. Willander; B. Hammarlund; R.A. Logan

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
213 KB
Volume
37
Category
Article
ISSN
0038-1101

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Improved InGaAs/InP double-heterojunctio
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✍ R. Driad; W. R. McKinnon; S. Laframboise; S. P. McAlister πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 139 KB

We report an impro¨ed thin-emitter InGaAsrInP heterostructure bipolar transistor where the InGaAs base layer is contacted through the thin InP emitter. The InP passi¨ation layer a¨oids the degradation of electrical characteristics obser¨ed in InGaAsrInP heterostructures after PECVD deposition. As co