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The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors

✍ Scribed by Shih-Chih Chen; Y.K. Su; C.Z. Lee

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
641 KB
Volume
34
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Simulation study of InP-based PNP hetero
Simulation study of InP-based PNP heterojunction bipolar transistors and incorporation of nonclassical effects
✍ S. Shi; K.P. Roenker; T. Kumar; M.M. Cahay; William E. Stanchina πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 335 KB

This paper describes a numerical approach to the modeling of PNP HBTs in the InP-based materials systems (InP/InGaAs and InAlAs/InGaAs). Initial device analysis was achieved in the drift-diffusion limit by self-consistent numerical solution of the Poisson, carrier continuity and conductor equations