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Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors

✍ Scribed by S.C. Chen; Y.K. Su; C.Z. Lee


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
448 KB
Volume
35
Category
Article
ISSN
0038-1101

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We report an impro¨ed thin-emitter InGaAsrInP heterostructure bipolar transistor where the InGaAs base layer is contacted through the thin InP emitter. The InP passi¨ation layer a¨oids the degradation of electrical characteristics obser¨ed in InGaAsrInP heterostructures after PECVD deposition. As co