Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design

✍ Scribed by R. Driad; W. R. McKinnon; S. Laframboise; S. P. McAlister

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 139 KB
• Volume: 21
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(19990520)21:4<235::aid-mop1>3.0.co;2-w

✦ Synopsis

We report an impro¨ed thin-emitter InGaAsrInP heterostructure bipolar transistor where the InGaAs base layer is contacted through the thin InP emitter. The InP passi¨ation layer a¨oids the degradation of electrical characteristics obser¨ed in InGaAsrInP heterostructures after PECVD deposition. As compared to unpassi¨ated HBTs, the InP passi¨ated de¨ices showed a remarkable impro¨ement of the current gain.