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The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures

✍ Scribed by E.A. Beam III; H.F. Chau


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
451 KB
Volume
164
Category
Article
ISSN
0022-0248

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