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Small-signal non-quasi-static model for single and double heterojunction bipolar transistors

✍ Scribed by Jeffrey C.-N. Huang; Ibrahim M. Abdel-Motaleb;


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
658 KB
Volume
36
Category
Article
ISSN
0038-1101

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A model for abrupt double heterojunction
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## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction