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Large-signal nonquasi-static model for single and double heterojunction bipolar transistors

โœ Scribed by Jeffrey C. Huang; Ibrahim M. Abdel-Motaleb


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
416 KB
Volume
35
Category
Article
ISSN
0038-1101

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A model for abrupt double heterojunction
โœ Antonio J. Garcรญa-Loureiro; Juan M. Lรณpez-Gonzรกlez ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 178 KB

## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermiโ€“Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction