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A model for abrupt double heterojunction bipolar transistors

✍ Scribed by Antonio J. García-Loureiro; Juan M. López-González

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
178 KB
Volume
17
Category
Article
ISSN
0894-3370

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✦ Synopsis

Abstract

In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs) and PN junctions can be easily obtained as a particular case of the general model presented here. In order to illustrate its features, the model is applied to an InP/GaAsSb/InP DHBT and an InP/InGaAs HBT. Copyright © 2004 John Wiley & Sons, Ltd.

📜 SIMILAR VOLUMES

Numerical analysis of abrupt heterojunct
Numerical analysis of abrupt heterojunction bipolar transistors
✍ Antonio J. Garcia-Loureiro; Juan M. Lopez-Gonzalez; Tomas F. Pena; Lluis Prat 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB

This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnell