Numerical analysis of abrupt heterojunction bipolar transistors

✍ Scribed by Antonio J. Garcia-Loureiro; Juan M. Lopez-Gonzalez; Tomas F. Pena; Lluis Prat

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 99 KB
• Volume: 11
• Category: Article
• ISSN: 0894-3370
• DOI: 10.1002/(sici)1099-1204(199807/08)11:4<221::aid-jnm303>3.0.co;2-v

✦ Synopsis

This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used.