A low temperature (Tdep ⩽800 °C) chemical vapor deposition process for the deposition of device-quality epitaxial silicon

✍ Scribed by W.R. Burger; R. Reif

• Book ID: 103952547
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 316 KB
• Volume: 1
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(88)90035-9

✦ Synopsis

A system has been developed that permits the deposition of device quality epitaxial silicon films at low temperatures. Using this system, epitaxial layers" have been grown that have a minoritycarrier lifetime of about 0.5 ms; the highest vahw reported for any low temperature silicon epitaxial process.