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IIIB-6 the impact of low-temperature (Tdep≤ 800°C) silicon epitaxy deposition conditions on bipolar transistor characteristics

✍ Scribed by Burger, W.R.; Reif, R.

Book ID
114596156
Publisher
IEEE
Year
1987
Tongue
English
Weight
323 KB
Volume
34
Category
Article
ISSN
0018-9383

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✍ W.R. Burger; R. Reif 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 316 KB

A system has been developed that permits the deposition of device quality epitaxial silicon films at low temperatures. Using this system, epitaxial layers" have been grown that have a minoritycarrier lifetime of about 0.5 ms; the highest vahw reported for any low temperature silicon epitaxial proces