𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications

✍ Scribed by Yong-Sub Lee; Yoon-Ha Jeong

Book ID
115499448
Publisher
IEEE
Year
2007
Tongue
English
Weight
394 KB
Volume
17
Category
Article
ISSN
1531-1309

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Highly efficient class-F GaN HEMT Dohert
Highly efficient class-F GaN HEMT Doherty amplifier for WCDMA applications
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 443 KB

## Abstract This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐car

A 40-W balanced GaN HEMT class-E power a
A 40-W balanced GaN HEMT class-E power amplifier with 71% efficiency for WCDMA base station
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 327 KB

## Abstract A balanced class‐E power amplifier (PA) using a push‐pull GaN HEMT for high power and high efficiency is represented. For validation, a class‐E PA is designed and implemented using a push‐pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the bal

A high-efficiency inverse class-F power
A high-efficiency inverse class-F power amplifier using GaN HEMT
✍ Hyoungjong Kim; Gilwong Choi; Jinjoo Choi 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 296 KB

## Abstract The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement

A high efficiency class-F power amplifie
A high efficiency class-F power amplifier using AIGaN/GaN HEMT
✍ Sangwon Ko; Wenhsing Wu; Jenshan Lin; Soohwan Jang; Fan Ren; Stephen Pearton; Ro 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 241 KB

## This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology was applied to a 0.75-m gate length and 300-m gate width AlGaN/ GaN HEMT. The 1 dB compression point o

A 1-GHz GaN HEMT based class-E power amp
A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 369 KB

## Abstract This article reports a highly efficient 1‐GHz class‐E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficien

A highly linear and efficient two-stage
A highly linear and efficient two-stage GaN HEMT asymmetrical Doherty amplifier for WCDMA applications
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 438 KB

## Abstract In this article, we propose a highly linear and efficient two‐stage GaN HEMT asymmetrical Doherty power amplifier (ADPA) for WCDMA applications. The first‐stage driving DPA not only improves the linearity as the predistortion circuit but also reduces the power consumption in the driving