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A dual source low-energy ion implantation system for use in silicon molecular beam epitaxy

✍ Scribed by A. Gottdang; K. Eich; A. Hassenbürger; W.H. Schulte; B. Cleff; D.J.W. Mous; R. Koudijs; G.F.A. van de Walle; J. Politiek

No coin nor oath required. For personal study only.

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