IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

✍ Scribed by McFee, J.H.; Swartz, R.G.; Voshchenkov, A.M.; Feldman, L.C.; Ota, Y.

• Book ID: 114593902
• Publisher: IEEE
• Year: 1981
• Tongue: English
• Weight: 183 KB
• Volume: 28
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1981.20546