✦ LIBER ✦

A DLTS study of 4H-SiC-basedp-njunctions fabricated by boron implantation

✍ Scribed by P. A. Ivanov; A. S. Potapov; T. P. Samsonova; O. Korol’kov; N. Sleptsuk

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-voltage (900 V) 4H-SiC Schottky dio

✍ I. V. Grekhov; P. A. Ivanov; N. D. Il’inskaya; O. I. Kon’kov; A. S. Potapov; T. 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 287 KB

Avalanche phenomena in 4H-SiC p-n diodes

✍ Negoro, Y.; Miyamoto, N.; Kimoto, T.; Matsunami, H. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 266 KB

Pulsed breakdown of 4H-SiC Schottky diod

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; T. P. Samsonova 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 262 KB

Electron trapping in 4H-SiC MOS capacito

✍ Basile, A. F.; Dhar, S.; Mooney, P. M. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 609 KB

Positron annihilation study of 4H-SiC by

✍ R.S. Yu; M. Maekawa; A. Kawasuso; B.Y. Wang; L. Wei 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 314 KB

Boron and phosphorus doping of a-SiC:H t

✍ F. Demichelis; G. Crovini; C.F. Pirri; E. Tresso; R. Galloni; C. Summonte; R. Ri 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 618 KB