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High-voltage (900 V) 4H-SiC Schottky diodes with a boron-implanted guardp-njunction

✍ Scribed by I. V. Grekhov; P. A. Ivanov; N. D. Il’inskaya; O. I. Kon’kov; A. S. Potapov; T. P. Samsonova

No coin nor oath required. For personal study only.

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Pulsed breakdown of 4H-SiC Schottky diod

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; T. P. Samsonova 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 262 KB

Excess leakage currents in high-voltage

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; T. P. Samsonova; N. D. Il’inskaya; O 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 175 KB

I-Vcharacteristics of high-voltage 4H-Si

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“Ideal” static breakdown in high-voltage

✍ P. A. Ivanov; I. V. Grekhov; N. D. Il’inskaya; T. P. Samsonova 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 53 KB