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Excess leakage currents in high-voltage 4H-SiC Schottky diodes

✍ Scribed by P. A. Ivanov; I. V. Grekhov; A. S. Potapov; T. P. Samsonova; N. D. Il’inskaya; O. I. Kon’kov; O. Yu. Serebrennikova

Book ID: 111444632
Publisher: Springer
Year: 2010
Tongue: English
Weight: 175 KB
Volume: 44
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782610050180

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## Abstract Current–voltage–temperature, capacitance–voltage, and Fourier transform‐deep level transient spectroscopy (FT‐DLTS) measurements have been employed to gain insights into the conduction mechanism in Re/4H n‐silicon carbide (SiC) Schottky diodes. A power law dependence of current on volta