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I-Vcharacteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

✍ Scribed by P. A. Ivanov; I. V. Grekhov; O. I. Kon’kov; A. S. Potapov; T. P. Samsonova; T. V. Semenov

No coin nor oath required. For personal study only.

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