✦ LIBER ✦

Quantum modelling of I – V characteristics for 4H–SiC Schottky barrier diodes

✍ Scribed by Blasciuc-Dimitriu, C; Horsfall, A B; Wright, N G; Johnson, C M; Vassilevski, K V; O'Neill, A G

Book ID: 120349307
Publisher: Institute of Physics
Year: 2004
Tongue: English
Weight: 807 KB
Volume: 20
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/1/002

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Experimental 4H-SiC junction-barrier Sch

Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; N. D. Il’inskaya; T. P. Samsonova; O 📂 Article 📅 2009 🏛 Springer 🌐 English ⚖ 259 KB

Reverse Characteristics of a 4H-SiC Scho

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode

✍ Hatakeyama, Tetsuo; Shinohe, Takashi 📂 Article 📅 2002 🏛 Trans Tech Publications, Ltd. 🌐 English ⚖ 323 KB

I(V) computational conduction model for

I(V) computational conduction model for a SiC-6H Schottky diode

✍ H. Benmaza; B. Akkal; M. Anani; H. Abid; Z. Bensaad; J.M. Bluet 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 663 KB

Barrier inhomogeneities of tungsten Scho

Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

✍ Hamida, A Ferhat; Ouennoughi, Z; Sellai, A; Weiss, R; Ryssel, H 📂 Article 📅 2008 🏛 Institute of Physics 🌐 English ⚖ 553 KB

I-Vcharacteristics of high-voltage 4H-Si

I-Vcharacteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

✍ P. A. Ivanov; I. V. Grekhov; O. I. Kon’kov; A. S. Potapov; T. P. Samsonova; T. V 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 233 KB

Investigation of barrier inhomogeneities

Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

✍ L. Boussouar; Z. Ouennoughi; N. Rouag; A. Sellai; R. Weiss; H. Ryssel 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 860 KB

Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch