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Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation

✍ Scribed by Basile, A. F.; Dhar, S.; Mooney, P. M.

Book ID: 121790593
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 609 KB
Volume: 109
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3583574

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