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Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

✍ Scribed by Basile, Alberto F.; Ahyi, A.C.; Feldman, L.C.; Williams, J.R.; Mooney, P.M.

Book ID: 120509766
Publisher: Trans Tech Publications, Ltd.
Year: 2012
Tongue: English
Weight: 264 KB
Volume: 717-720
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.717-720.757

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