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A strong reduction in the density of near-interface traps at the SiO[sub 2]∕4H-SiC interface by sodium enhanced oxidation

✍ Scribed by Allerstam, F.; Ólafsson, H. Ö.; Gudjónsson, G.; Dochev, D.; Sveinbjörnsson, E. Ö.; Rödle, T.; Jos, R.


Book ID
120520637
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
341 KB
Volume
101
Category
Article
ISSN
0021-8979

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