Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation

✍ Scribed by Negoro, Y.; Miyamoto, N.; Kimoto, T.; Matsunami, H.

• Book ID: 114616838
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 266 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2002.802637