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A comparison of graphite and AlN caps used for annealing ion-implanted SiC

โœ Scribed by K. A. Jones; M. A. Derenge; P. B. Shah; T. S. Zheleva; M. H. Ervin; K. W. Kirchner; M. C. Wood; C. Thomas; M. G. Spencer; O. W. Holland; R. D. Vispute

Book ID
107452800
Publisher
Springer US
Year
2002
Tongue
English
Weight
724 KB
Volume
31
Category
Article
ISSN
0361-5235

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PolycrystaUine silicon (Wacker-SILSO) solar cells have been made by phosphorus implantation in combination with pulsed excimer laser annealing or thermal annealing. It was found that laser annealing yields cells with a short-circuit current which is 3% -4% higher than that obtained by thermal anneal