✦ LIBER ✦

193 nm lithography using a negative acting P(SI-CMS) resist

✍ Scribed by Bruce W. Smith; Anthony E. Novembre; David A. Mixon

Book ID: 104306380
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 674 KB
Volume: 34
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00005-1

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✦ Synopsis

Copolymers of trimethysilylmethyl methacrylate and chloromethylstyrene [P(SI-CMS)] have been formulated as negative resists for exposure at 193 nm. To achieve maximum sensitivity, absorption has been targeted so that the amount of radiation exposing the base of a given film thickness is I,,e ', leading to an optimum optical absorbance of log,,,e. or 0.434. Through control of the mole ratis of the mOonomers in r.he P(SI-CMS) copolymer, optimum response has been tailored ihr coating thicknesses from 2000 A to 5500 A. Optimal formulations yield working sensitivities of from 4 to 20 mJlcm' for materials having a ti, of 4 X IO' g/mole, with resolution demonstrated below 0.4 pm. Resists exhibit etching resistance in 0, RIE and are suitable for application in both single layer and bi-layer processes.

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