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15 W AlGaN/GaN Heterojunction FET on Sapphire Substrate

โœ Scribed by Ando, Y. ;Okamoto, Y. ;Miyamoto, H. ;Hayama, N. ;Nakayama, T. ;Kasahara, K. ;Ohno, Y. ;Kuzuhara, M.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
98 KB
Volume
188
Category
Article
ISSN
0031-8965

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AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar ฯฉ ions implant-isolation technology. The first results obtained are very good in terms of device isolation.