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Γ andXbandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

✍ Scribed by R People; A Jayaraman; K W Wecht; S K Alexander; A Y Cho; D L Sivco


Book ID
112908870
Publisher
Springer-Verlag
Year
1988
Tongue
English
Weight
272 KB
Volume
31
Category
Article
ISSN
0304-4289

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In0.53Ga0.47As>In0.52Al0.48As quantum wi
✍ S. Hiyamizu; Y. Ohno; S. Shimomura 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at