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Optical and structural characterizations for optimized growth of In0.52Al0.48As on InP substrates by molecular beam epitaxy

โœ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
686 KB
Volume
35
Category
Article
ISSN
0921-5107

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Growth of In0.52Al0.48As on InP substrat
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โœ S.F. Yoon ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 126 KB

Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st

In0.53Ga0.47As>In0.52Al0.48As quantum wi
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Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at