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ZrO2as a high-K dielectric for strained SiGe MOS devices

✍ Scribed by R. Mahapatra; G. S. Kar; C. B. Samantaray; A. Dhar; D. Bhattacharya; S. K. Ray

Book ID: 110646365
Publisher: Springer-Verlag
Year: 2002
Tongue: English
Weight: 48 KB
Volume: 25
Category: Article
ISSN: 0250-4707
DOI: 10.1007/bf02710526

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