✦ LIBER ✦
Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge
✍ Scribed by Zainuddin, A.N.M.; Haque, A.
- Book ID
- 114618034
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 114 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
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